| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| GBU800 GBU808 |
8.0Amps Glass Passivated Single Phase Silico n Bridge
|
First Components International
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| 2N3789 |
(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|
| 2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS
|
SemeLAB
Seme LAB
|
| BD277 |
7-A 70-W EPITAXIAL BASE SILICON PNP VERSAWATT TRANSISTORS
|
Electronic Theatre Controls, Inc.
ETC[ETC]
General Electric Solid State
|
| BD202 BD204 |
(BD202 / BD204) SILCON EPITAXIAL-BASE POWER TRANSITORS
|
Comset Semiconductors
|
| BD201 BD203 |
(BD201 / BD203) SILCON EPITAXIAL-BASE POWER TRANSISTORS
|
Comset Semiconductors
|
| BD241B BD241 BD241A |
NPN SILCON EPITAXIAL BASE POWER TRANSISTORS npn型秀康外延基地功率晶体管
|
Rectron Semiconductor
MICRO-ELECTRONICS[Micro Electronics]
|
| TIP147F TIP145F TIP146F TIP147FTU |
PNP Epitaxial Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
